1996. 10. 16 1/3 semiconductor technical data KTC3191 epitaxial planar npn transistor revision no : 1 high frequency low noise amplifier application. hf band amplifier application. feature low noise figure : nf=3.5db(max.) (f=1mhz). maximum rating (ta=25 1 ) 1 2 3 to-92m dim millimeters a b c d e f g h j k 1. emitter 2. collector 3. base 3.20 max 4.30 max 0.55 max 2.40 0.15 1.27 2.30 14.00 0.50 0.60 max 1.05 1.45 25 0.55 max l m n f a g j k d ee l n m c h 0.80 o 0.75 o b + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 4 v collector current i c 100 ma emitter current i e -100 ma collector power dissipation p c 400 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 note : h fe classification r:40 80 , o:70 140 , y:120 240 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =35v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =12v, i c =2ma 40 - 240 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 0.4 v base-emitter saturation voltage v be(sat) i c =10ma, i b =1ma - - 1.0 v transition frequency f t v ce =10v, i c =2ma 80 120 - mhz reverse transfer capacitance c re v cb =10v, f=1mhz - 2.2 3.0 pf collector-base time constant c c rbb ? v ce =10v, i e =-1ma, f=30mhz - 30 50 ps noise figure nf v ce =10v, i c =1ma, f=1mhz, rg=50 u - 2.0 3.5 db
1996. 10. 16 2/3 KTC3191 revision no : 1 20 collector current 0 c 1000 1500 base current b static characteristics 10 dc current gain h fe 500 10 3 1 0.5 collector current i (ma) c h - i 40 60 80 100 500 0 10 20 30 0.8 0.6 0.4 0.2 i (ma) voltage v (v) base-emitter be i ( a) voltage v (v) collector-emitter ce i =0.1ma b 1.6 1.4 1.2 1.0 0.8 0.6 0.5 0.4 0.3 0.2 0 v =2v ce ce v =2v common emitter ta=25 c fe c 30 100 200 30 50 100 300 collector current i (ma) c t f - i 10 0.5 1 300 500 50 30 100 transition frequency f (mhz) t 310 c 30 200 100 common emitter v =10v ta=25 c ce y parameters (typ.) (common emitter v ce =6v, i e =-1ma, f=1mhz) characteristic symbol ktc3190-r ktc3190-o ktc3190-y unit input conductance g ie 0.5 0.35 0.22 ms input capacitance c ie 50 48 46 pf output conductance g oe 4 5 6.5 s output capacitance c oe 3.7 3.4 3.2 pf forward transfer admittance |y fe | 36 36 36 ms phase angle of forward transfer admittance fe -1.6 -1.6 -1.6 . reverse transfer admittance |y re | 14 14 14 s phase angle of reverse transfer admittance re -90 -90 -90 .
1994. 6. 24 3/3 KTC3191 revision no : 0 10 forward transfer admittance 5 300 2 collector-emitter voltage v (v) ce y , - v y - i e emitter current i (ma) -0.1 -0.3 -0.5 re 5 reverse transfer admittance 10 10 reverse transfer admittance 3 re 100 2 collector-emitter voltage v (v) ce y - v y - i e emitter current i (ma) -0.1 -0.3 -0.5 -1 100 5 10 re e y ( s) -1 -3 -5 30 50 100 common emitter v =6v f=1mhz ta=25 c =-90 c ce re fe re ce 4 6 8 10 12 14 16 y (ms) fe 30 50 100 fe transfer admittance ( ) phase angle of forward -0.5 -1 -3 -5 -10 -30 common emitter i =-1ma f=1mhz ta=25 c e y fe fe re ce y ( s) 46810121416 5 30 50 common emitter i =-1ma f=1mhz ta=25 c =-90 e re fe e fe , -3 -5 30 50 fe y (ms) forward transfer admittance phase angle of forward transfer admittance ( ) fe -0.5 -1 -3 -5 -10 common emitter v =6v f=1mhz ta=25 c ce y r, o, y fe fe r, o, y
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